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Förster, Arnold
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Optical investigation of impurity bands in a delta-doped n-layer / J. Schönhut ; C. Metzner ; S. Müller ... A. Förster ...
(1996)
Förster, Arnold
;
Schönhut, J.
;
Metzner, C.
Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. Förster ...
(1996)
Förster, Arnold
;
Indlekofer, K.
;
Lange, J.
Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ...
(1996)
Förster, Arnold
;
Appenzeller, J.
;
Schroer, C.
Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ...
(1997)
Förster, Arnold
;
Schmidt, T.
;
Haug, R. J.
Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. Förster ...
(1995)
Förster, Arnold
;
Lauter, J.
;
Bauser, E.
AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ; D. Protic ; A. Förster ; H. Lüth
(1995)
Förster, Arnold
;
Lauter, J.
;
Protic, D.
;
Lüth, H.
Wet chemical separation of low-temperature GaAs layers from their GaAs substrates / J. Novák ; M. Morvic ; J. Betko ; A. Förster ...
(1996)
Förster, Arnold
;
Novák, J.
;
Morvic, M.
The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
(1988)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ...
(1995)
Förster, Arnold
;
Schäpers, T.
;
Krüger, M.
;
Appenzeller, J.
Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ...
(1995)
Förster, Arnold
;
Kordos, P.
;
Betko, J.
Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
(1996)
Förster, Arnold
;
Schmidt, T.
;
Tewordt, M.
;
Haug, R. J.
The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
(1994)
Förster, Arnold
;
Lange, J.
;
Gerthsen, D.
Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
(1997)
Förster, Arnold
;
Ohler, C.
;
Moers, J.
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
(1993)
Förster, Arnold
;
Lange, J.
;
Gerthsen, D.
Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
(1993)
Förster, Arnold
;
Ohler, C.
;
Moers, J.
Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R
(2002)
Förster, Arnold
;
Darmo, J.
;
Schafer, F.
;
Kordos, P.
Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.
(2002)
Förster, Arnold
;
Adam, R.
;
Mikulics, M.
;
Schelten, J.
Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
(1992)
Förster, Arnold
;
Zettler, J.-T.
;
Mikkelsen, H.
;
Leo, K.
Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ...
(1988)
Förster, Arnold
;
Schäfer, B.-J.
;
Londschien, M.
31
to
50