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Author
Arnold Förster (46)
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2005
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Fachbereich Energietechnik
(46)
INB - Institut für Nano- und Biotechnologien
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46
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The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
(1988)
Arnold Förster
;
J. M. Layet
;
H. Lüth
Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ...
(1988)
Arnold Förster
;
B.-J. Schäfer
;
M. Londschien
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Arnold Förster
;
J. M. Layet
;
H. Lüth
Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
(1992)
Arnold Förster
;
J.-T. Zettler
;
H. Mikkelsen
;
K. Leo
Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
(1993)
Arnold Förster
;
J. Lange
;
D. Gerthsen
Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
(1993)
Arnold Förster
;
C. Ohler
;
J. Moers
The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
(1994)
Arnold Förster
;
J. Lange
;
D. Gerthsen
Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
(1994)
Arnold Förster
;
J. Darmo
;
F. Dubecký
;
P. Kordos
Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
(1994)
Arnold Förster
;
J. Betko
;
P. Kordos
;
S. Kuklovsky
Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ...
(1994)
Arnold Förster
;
F.. Dubecky
;
J. Darmo
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