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Förster, Arnold
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A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
(2001)
Stock, J.
;
Malindretos, J.
;
Indlekofer, K.M.
;
Pöttgens, Michael
;
Förster, Arnold
;
Lüth, Hans
Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P.
(1999)
Förster, Arnold
;
Betko, J.
;
Morvic, M.
;
Novak, J.
Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements. Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P.
(1999)
Förster, Arnold
;
Morvic, M.
;
Betko, J.
;
Novak, J.
Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ...
(1996)
Förster, Arnold
;
Betko, J.
;
Morvic, M.
;
Novak, J.
Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster
(1996)
Förster, Arnold
;
Darmo, J.
;
Dubecký, F.
;
Kordos, P.
Perspectives of resonant tunneling diodes
(2002)
Förster, Arnold
;
Stock, J.
;
Indlekofer, K. M.
Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(2005)
Förster, Arnold
;
Wensorra, J.
;
Indlekofer, K. M.
;
Lüth, H.
Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H.
(1998)
Förster, Arnold
;
Malzer, S.
;
Heber, J.
;
Peter, M.
Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ...
(1998)
Förster, Arnold
;
Döhler, G. H
;
Heber, J.
On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
(2004)
Zatko, B.
;
Dubecký, F.
;
Bohacek, P.
;
Gombia, E.
;
Frigeri, P.
;
Mosca, R.
;
Franchi, S.
;
Huarn, J.
;
Nescas, V.
;
Sekacova, M.
;
Förster, Arnold
;
Kordos, P.
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10