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Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ...
(1995)
Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ...
(1988)