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Förster, Arnold
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Fachbereich Energietechnik
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Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ...
(1996)
Förster, Arnold
;
Appenzeller, J.
;
Schroer, C.
Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ...
(1997)
Förster, Arnold
;
Schmidt, T.
;
Haug, R. J.
Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. Förster ...
(1995)
Förster, Arnold
;
Lauter, J.
;
Bauser, E.
AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ; D. Protic ; A. Förster ; H. Lüth
(1995)
Förster, Arnold
;
Lauter, J.
;
Protic, D.
;
Lüth, H.
Wet chemical separation of low-temperature GaAs layers from their GaAs substrates / J. Novák ; M. Morvic ; J. Betko ; A. Förster ...
(1996)
Förster, Arnold
;
Novák, J.
;
Morvic, M.
The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
(1988)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ...
(1995)
Förster, Arnold
;
Schäpers, T.
;
Krüger, M.
;
Appenzeller, J.
Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ...
(1995)
Förster, Arnold
;
Kordos, P.
;
Betko, J.
Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
(1996)
Förster, Arnold
;
Schmidt, T.
;
Tewordt, M.
;
Haug, R. J.
The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
(1994)
Förster, Arnold
;
Lange, J.
;
Gerthsen, D.
31
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40