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Förster, Arnold
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Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
(1997)
Förster, Arnold
;
Ohler, C.
;
Moers, J.
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
(1993)
Förster, Arnold
;
Lange, J.
;
Gerthsen, D.
Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
(1993)
Förster, Arnold
;
Ohler, C.
;
Moers, J.
Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R
(2002)
Förster, Arnold
;
Darmo, J.
;
Schafer, F.
;
Kordos, P.
Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.
(2002)
Förster, Arnold
;
Adam, R.
;
Mikulics, M.
;
Schelten, J.
Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
(1992)
Förster, Arnold
;
Zettler, J.-T.
;
Mikkelsen, H.
;
Leo, K.
Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ...
(1988)
Förster, Arnold
;
Schäfer, B.-J.
;
Londschien, M.
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