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Darmo, J.
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Förster, Arnold
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Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster
(1996)
Förster, Arnold
;
Darmo, J.
;
Dubecký, F.
;
Kordos, P.
Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
(1998)
Förster, Arnold
;
Darmo, J.
;
Dubecky, F.
;
Kordos, P.
Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
Darmo, J.
;
Schäffer, F.
;
Förster, Arnold
;
Kordos, P.
Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
(1994)
Förster, Arnold
;
Darmo, J.
;
Dubecký, F.
;
Kordos, P.
Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ...
(1994)
Förster, Arnold
;
Dubecky, F..
;
Darmo, J.
Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R
(2002)
Förster, Arnold
;
Darmo, J.
;
Schafer, F.
;
Kordos, P.
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