Refine
Year of publication
Institute
Document Type
- Article (159)
- Conference Proceeding (7)
- Part of a Book (1)
Keywords
- Biosensor (1)
- Biosensorik (1)
- ISFET (1)
- Wafer (1)
- capillary micro-droplet cell (1)
- wafer-level testing (1)
468 Scatter dose determination at the eye lens during a mask based whole brain radiotherapy (WBRT)
(2005)
This work describes a procedure to yield attenuation maps from MR images which are used for the absorption correction (AC) of brain PET data. Such an approach could be mandatory for future combined PET and MRI scanners, which probably do not include a transmission facility. T1-weighted MR images were segmented into brain tissue, bone, soft tissue, and sinus; attenuation coefficients corresponding to elemental composition and density as well as to 511 keV photon energy were respectively assigned. Attenuation maps containing up to four compartments were created and forward projected into sinograms with attenuation factors which then were used for AC during reconstruction of FDG-PET data. The commonly used AC based on a radioactive (68Ge) transmission scan served as reference. The reconstructed radioactivity values obtained with the MRI-based AC were about 20% lower than those obtained with PET-based AC if the skull was not taken into account. Considering the skull the difference was still about 10%. Our investigations demonstrate the feasibility of a MRI-based AC, but revealed also the necessity of a satisfying delineation of bone thickness which tends to be underestimated in our first approach of T1-weighted MR image segmentation.
Side-bands in ¹⁸⁰ Os
(1981)
Functional testing and characterisation of ISFETs on wafer level by means of a micro-droplet cell
(2006)
A wafer-level functionality testing and characterisation system for ISFETs (ionsensitive field-effect transistor) is realised by means of integration of a specifically designed capillary electrochemical micro-droplet cell into a commercial wafer prober-station. The developed system allows the identification and selection of “good” ISFETs at the earliest stage and to avoid expensive bonding, encapsulation and packaging processes for nonfunctioning ISFETs and thus, to decrease costs, which are wasted for bad dies. The developed system is also feasible for wafer-level characterisation of ISFETs in terms of sensitivity, hysteresis and response time. Additionally, the system might be also utilised for wafer-level testing of further electrochemical sensors.