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Kordos, P.
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Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ...
(1995)
Förster, Arnold
;
Kordos, P.
;
Betko, J.
Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. Förster
(1997)
Förster, Arnold
;
Kordos, P.
;
Ruders, F.
Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
(1998)
Förster, Arnold
;
Darmo, J.
;
Dubecky, F.
;
Kordos, P.
Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
(1994)
Förster, Arnold
;
Darmo, J.
;
Dubecký, F.
;
Kordos, P.
Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
(1994)
Förster, Arnold
;
Betko, J.
;
Kordos, P.
;
Kuklovsky, S.
Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ...
(1995)
Förster, Arnold
;
Kordos, P.
;
Betko, J.
Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. Förster ...
(1997)
Förster, Arnold
;
Kordos, P.
;
Marso, M.
Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R
(2002)
Förster, Arnold
;
Darmo, J.
;
Schafer, F.
;
Kordos, P.
Field effect transistor-insect antenna junction
(1997)
Schütz, S.
;
Weißbecker, B.
;
Hummel, Hans E.
;
Schöning, Michael Josef
;
Riemer, A.
;
Kordos, P.
;
Lüth, H.
Porous silicon as a substrate material for potentiometric biosensors
(1996)
Thust, Marion
;
Schöning, Michael Josef
;
Frohnhoff, S.
;
Arens-Fischer, R.
;
Kordos, P.
;
Lüth, H.
41
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50