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Arnold Förster (144)
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Fachbereich Energietechnik (144)
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The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
(1988)
Arnold Förster
;
J. M. Layet
;
H. Lüth
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Arnold Förster
;
J. M. Layet
;
H. Lüth
Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
(1992)
Arnold Förster
;
M. Lentzen
;
D. Gerthsen
Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates / M. Lentzen ; D. Gerthsen ; A. Förster ...
(1995)
Arnold Förster
;
M. Lentzen
;
D. Gerthsen
Hot electron injector Gunn diode for advanced driver assistance systems
(2007)
Arnold Förster
;
M. I. Lepsa
;
D. Freundt
DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ...
(1996)
Arnold Förster
;
A. Leuther
;
H. Lüth
Quasi-two-dimensional plasmons of a single δ-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. Förster ...
(1993)
Arnold Förster
;
C. Lohe
;
A. Leuther
Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
(1989)
Arnold Förster
;
H. Lüth
Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
(1987)
Arnold Förster
;
H. Lüth
Die neue Welt
(1999)
Arnold Förster
;
Hans Lüth
;
Thomas Schäpers
56
to
65