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GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.
Functional testing and characterisation of ISFETs on wafer level by means of a micro-droplet cell
(2006)
A wafer-level functionality testing and characterisation system for ISFETs (ionsensitive field-effect transistor) is realised by means of integration of a specifically designed capillary electrochemical micro-droplet cell into a commercial wafer prober-station. The developed system allows the identification and selection of “good” ISFETs at the earliest stage and to avoid expensive bonding, encapsulation and packaging processes for nonfunctioning ISFETs and thus, to decrease costs, which are wasted for bad dies. The developed system is also feasible for wafer-level characterisation of ISFETs in terms of sensitivity, hysteresis and response time. Additionally, the system might be also utilised for wafer-level testing of further electrochemical sensors.
We report on the synthesis and CO gas-sensing properties of mesoporous tin(IV) oxides (SnO2). For the synthesis cetyltrimethylammonium bromide (CTABr) was used as a structure-directing agent; the resulting SnO2 powders were applied as films to commercially available sensor substrates by drop coating. Nitrogen physisorption shows specific surface areas up to 160 m2·g-1 and mean pore diameters of about 4 nm, as verified by TEM. The film conductance was measured in dependence on the CO concentration in humid synthetic air at a constant temperature of 300 °C. The sensors show a high sensitivity at low CO concentrations and turn out to be largely insensitive towards changes in the relative humidity. We compare the materials with commercially available SnO2-based sensors.
In: Proceedings of the 39th Annual Hawaii International Conference on System Sciences, 2006. HICSS '06 http://dx.doi.org/10.1109/HICSS.2006.200 The conceptual design phase at the beginning of the building construction process is not adequately supported by any CAD-tool. Conceptual design support needs regarding two aspects: first, the architect must be able to develop conceptual sketches that provide abstraction from constructive details. Second, conceptually relevant knowledge should be available to check these conceptual sketches. The paper deals with knowledge to formalize for conceptual design. To enable domain experts formalizing knowledge, a graph-based specification is presented that allows the development of a domain ontology and design rules specific for one class of buildings at runtime. The provided tool support illustrates the introduced concepts and demonstrates the consistency analysis between knowledge and conceptual design.
An array of 50 MHz quartz microbalances (QMBs) coated with a dendronized polymer was used to detect small amounts of volatile organic compounds (VOCs) in the gas phase. The results were compared to those obtained with the commonly used 10 MHz QMBs. The 50 MHz QMBs proved to be a powerful tool for the detection of VOCs in the gas phase; therefore, they represent a promising alternative to the much more delicate surface acoustic wave devices (SAWs).
Micromachined thermal heater platforms offer low electrical power consumption and high modulation speed, i.e. properties which are advantageous for realizing nondispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by employing different kinds of metallic and semiconductor heater materials. Our results clearly reveal the superior high-temperature performance of semiconductor over metallic heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be attained using heavily antimony-doped tin dioxide (SnO2:Sb) heater elements.