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- Fachbereich Medizintechnik und Technomathematik (2052) (remove)
Light-addressable potentiometric sensors (LAPS) are semiconductor-based potentiometric sensors, with the advantage to detect the concentration of a chemical species in a liquid solution above the sensor surface in a spatially resolved manner. The addressing is achieved by a modulated and focused light source illuminating the semiconductor and generating a concentration-depending photocurrent. This work introduces a LAPS set-up that is able to monitor the electrical impedance in addition to the photocurrent. The impedance spectra of a LAPS structure, with and without illumination, as well as the frequency behaviour of the LAPS measurement are investigated. The measurements are supported by electrical equivalent circuits to explain the impedance and the LAPS-frequency behaviour. The work investigates the influence of different parameters on the frequency behaviour of the LAPS. Furthermore, the phase shift of the photocurrent, the influence of the surface potential as well as the changes of the sensor impedance will be discussed.
The chemical imaging sensor is a semiconductor-based chemical sensor that can visualize the spatial distribution of specific ions on the sensing surface. The conventional chemical imaging system based on the light-addressable potentiometric sensor (LAPS), however, required a long time to obtain a chemical image, due to the slow mechanical scan of a single light beam. For high-speed imaging, a plurality of light beams modulated at different frequencies can be employed to measure the ion concentrations simultaneously at different locations on the sensor plate by frequency division multiplex (FDM). However, the conventional measurement geometry of back-side illumination limited the bandwidth of the modulation frequency required for FDM measurement, because of the low-pass filtering characteristics of carrier diffusion in the Si substrate. In this study, a high-speed chemical imaging system based on front-side-illuminated LAPS was developed, which achieved high-speed spatiotemporal recording of pH change at a rate of 70 frames per second.
Einschränkung von Taluskippung und -vorschub durch Sprunggelenkorthesen nach fibularer Bandruptur
(2013)
Die fibulare Bandruptur zählt zu einer der am häufigsten auftretenden Verletzungen des
Bewegungsapparats. In den meisten Fällen wird heute die konservativ frühfunktionelle Therapie mit Sprunggelenkorthesen allgemein bevorzugt. Im Rahmen der vorliegenden Studie wurden 14 verschiedene Sprunggelenkorthesen im Hinblick auf ihre Einschränkung von Taluskippung und Talusvorschub
untersucht. Zur Simulation einer fibularen Bandruptur wurde ein Unterschenkelmodell aus Holz mit Fußteil, mit angelegten Orthesen in einen Scheuba-Halteapparat eingespannt und mit 150 N seitlich sowie anterior-posterior belastet. Anhand der erstellten "gehaltenen" Röntgenaufnahmen konnten Taluskippung und Talusvorschub jeder einzelnen Orthese eindeutig bestimmt werden. Die meisten Orthesen erreichten zufriedenstellende Ergebnisse. Es stellte sich heraus, dass vor allem eine eng anliegende, im Gelenkbereich anatomisch angepasste Form vorteilhaft zu sein scheint.
In this work, a multi-sensor chip for the investigation of the sensing properties of different types of metal oxides towards hydrogen peroxide in the ppm range is presented. The fabrication process and physical characterization of the multi-sensor chip are described. Pure SnO2 and WO3 as well as Pd- and Pt-doped SnO2 films are characterized in terms of their sensitivity to H2O2. The sensing films have been prepared by drop-coating of water-dispensed nano-powders. A physical characterization, including scanning electron microscopy and X-ray diffraction analysis of the deposited metal-oxide films, was done. From the measurements in hydrogen peroxide atmosphere, it could be shown, that all of the tested metal oxide films are suitable for the detection of H2O2 in the ppm range. The highest sensitivity and reproducibility was achieved using Pt-doped SnO2.
Calibration plot of a SnO2, WO3, Pt-, and Pd-doped SnO2 gas sensor for H2O2 concentrations in the ppm range.