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Title
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Author
Vertically integrated transistor-laser structure, take 2
(2000)
Hoskens, R. C. P.
;
Tolstikhin, V.I.
;
Förster, Arnold
;
Roer, T.G. van de
Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
Darmo, J.
;
Schäffer, F.
;
Förster, Arnold
;
Kordos, P.
A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
(2000)
Hodel, U.
;
Orzati, A.
;
Marso, M.
;
Homann, O.
;
Fox, A.
;
Hart, A. v. d.
;
Förster, Arnold
;
Kordos, P.
;
Lüth, H.
Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
(2000)
Hoskens, R.C.P.
;
Roer, T.G. van de
;
Tolstikhin, V.I.
;
Förster, Arnold
A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
(2001)
Stock, J.
;
Malindretos, J.
;
Indlekofer, K.M.
;
Pöttgens, Michael
;
Förster, Arnold
;
Lüth, Hans
Resonant spectroscopy of electric-field-induced superlattices
(2001)
Vitusevich, S. A.
;
Förster, Arnold
;
Lüth, H.
;
Belyaev, A. E.
;
Danylyuk, S. V.
;
Konakova, R. V.
;
Sheka, D. I.
Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing
(2001)
Krafft, B.
;
Förster, Arnold
;
Hart, A. van der
;
Schäpers, T.
Perspectives of resonant tunneling diodes
(2002)
Förster, Arnold
;
Stock, J.
;
Indlekofer, K. M.
Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Indlekofer, K.-M.
;
Lüth, H.
;
Belyaev, A. E.
;
Glavin, B. A.
;
Konakova, R. V.
Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
(2000)
Tillmann, K.
;
Förster, Arnold
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415