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Arnold Förster (147)
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(145)
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(144)
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Biosensor
(1)
GaAs hot electron injector
(1)
Gunn diode
(1)
microwave generation
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Fachbereich Energietechnik
(144)
INB - Institut für Nano- und Biotechnologien
(26)
Fachbereich Medizintechnik und Technomathematik
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Fachbereich Chemie und Biotechnologie
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147
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Title
Title
Author
Author
Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, Jörg; Förster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans
(2002)
Arnold Förster
;
Jörg Malindretos
;
Klaus Michael Indlekofer
;
Mihail Ion Lepsa
Die neue Welt
(1999)
Arnold Förster
;
Hans Lüth
;
Thomas Schäpers
Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
(1989)
Arnold Förster
;
H. Lüth
Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
(1987)
Arnold Förster
;
H. Lüth
Quasi-two-dimensional plasmons of a single δ-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. Förster ...
(1993)
Arnold Förster
;
C. Lohe
;
A. Leuther
DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ...
(1996)
Arnold Förster
;
A. Leuther
;
H. Lüth
Hot electron injector Gunn diode for advanced driver assistance systems
(2007)
Arnold Förster
;
M. I. Lepsa
;
D. Freundt
Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
(1992)
Arnold Förster
;
M. Lentzen
;
D. Gerthsen
Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates / M. Lentzen ; D. Gerthsen ; A. Förster ...
(1995)
Arnold Förster
;
M. Lentzen
;
D. Gerthsen
The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
(1988)
Arnold Förster
;
J. M. Layet
;
H. Lüth
81
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90