Article
Refine
Year of publication
- 2024 (33)
- 2023 (65)
- 2022 (78)
- 2021 (86)
- 2020 (101)
- 2019 (95)
- 2018 (84)
- 2017 (72)
- 2016 (78)
- 2015 (83)
- 2014 (93)
- 2013 (97)
- 2012 (82)
- 2011 (130)
- 2010 (121)
- 2009 (121)
- 2008 (103)
- 2007 (94)
- 2006 (86)
- 2005 (99)
- 2004 (131)
- 2003 (74)
- 2002 (92)
- 2001 (88)
- 2000 (84)
- 1999 (88)
- 1998 (82)
- 1997 (79)
- 1996 (70)
- 1995 (68)
- 1994 (76)
- 1993 (51)
- 1992 (48)
- 1991 (25)
- 1990 (35)
- 1989 (38)
- 1988 (54)
- 1987 (32)
- 1986 (18)
- 1985 (32)
- 1984 (18)
- 1983 (17)
- 1982 (26)
- 1981 (18)
- 1980 (35)
- 1979 (23)
- 1978 (30)
- 1977 (14)
- 1976 (13)
- 1975 (10)
- 1974 (3)
- 1972 (2)
- 1971 (1)
- 1968 (1)
Institute
- Fachbereich Medizintechnik und Technomathematik (1358)
- INB - Institut für Nano- und Biotechnologien (503)
- Fachbereich Chemie und Biotechnologie (472)
- Fachbereich Elektrotechnik und Informationstechnik (414)
- IfB - Institut für Bioengineering (411)
- Fachbereich Energietechnik (361)
- Fachbereich Luft- und Raumfahrttechnik (254)
- Fachbereich Maschinenbau und Mechatronik (148)
- Fachbereich Wirtschaftswissenschaften (116)
- Fachbereich Bauingenieurwesen (69)
Language
- English (3277) (remove)
Document Type
- Article (3277) (remove)
Keywords
- Einspielen <Werkstoff> (7)
- avalanche (5)
- Earthquake (4)
- FEM (4)
- Finite-Elemente-Methode (4)
- LAPS (4)
- biosensors (4)
- field-effect sensor (4)
- frequency mixing magnetic detection (4)
- CellDrum (3)
This work is an attempt to answer the question: How to use convex programming in shakedown analysis of structures made of materials with temperature-dependent properties. Based on recently established shakedown theorems and formulations, a dual relationship between upper and lower bounds of the shakedown limit load is found, an algorithmfor shakedown analysis is proposed. While the original problem is neither convex nor concave, the algorithm presented here has the advantage of employing convex programming tools.
An Analysis of Retransmission Strategies for Reliable Multicast Protocols / Schuba, M. ; Reichl, P.
(1998)
The characterization of the degradation kinetics of biodegradable polymers is mandatory with regard to their proper application. In the present work, polymer-modified electrolyte–insulator–semiconductor (PMEIS) field-effect sensors have been applied for in-situ monitoring of the pH-dependent degradation kinetics of the commercially available biopolymer poly(d,l-lactic acid) (PDLLA) in buffer solutions from pH 3 to pH 13. PDLLA films of 500 nm thickness were deposited on the surface of an Al–p-Si–SiO2–Ta2O5 structure from a polymer solution by means of spin-coating method. The PMEIS sensor is, in principle, capable to detect any changes in bulk, surface and interface properties of the polymer induced by degradation processes. A faster degradation has been observed for PDLLA films exposed to alkaline solutions (pH 9, pH 11 and pH 13).
The on-chip integration of multiple biochemical sensors based on field-effect electrolyte-insulator-semiconductor capacitors (EISCAP) is challenging due to technological difficulties in realization of electrically isolated EISCAPs on the same Si chip. In this work, we present a new simple design for an array of on-chip integrated, individually electrically addressable EISCAPs with an additional control gate (CG-EISCAP). The existence of the CG enables an addressable activation or deactivation of on-chip integrated individual CG-EISCAPs by simple electrical switching the CG of each sensor in various setups, and makes the new design capable for multianalyte detection without cross-talk effects between the sensors in the array. The new designed CG-EISCAP chip was modelled in so-called floating/short-circuited and floating/capacitively-coupled setups, and the corresponding electrical equivalent circuits were developed. In addition, the capacitance-voltage curves of the CG-EISCAP chip in different setups were simulated and compared with that of a single EISCAP sensor. Moreover, the sensitivity of the CG-EISCAP chip to surface potential changes induced by biochemical reactions was simulated and an impact of different parameters, such as gate voltage, insulator thickness and doping concentration in Si, on the sensitivity has been discussed.