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In this work, the catalyst manganese(IV) oxide (MnO2), of calorimetric gas sensors (to monitor the sterilization agent vaporized hydrogen peroxide) has been investigated in more detail. Chemical analyses by means of X-ray-induced photoelectron spectroscopy have been performed to unravel the surface chemistry prior and after exposure to hydrogen peroxide vapor at elevated temperature, as applied in the sterilization processes of beverage cartons. The surface characterization reveals a change in oxidation states of the metal oxide catalyst after exposure to hydrogen peroxide. Additionally, a cleaning effect of the catalyst, which itself is attached to the sensor surface by means of a polymer interlayer, could be observed.
Field-effect-based electrolyte-insulator-semiconductor (EIS) sensors were modified with a bilayer of positively charged weak polyelectrolyte (poly(allylamine hydrochloride) (PAH)) and probe single-stranded DNA (ssDNA) and are used for the detection of complementary single-stranded target DNA (cDNA) in different test solutions. The sensing mechanism is based on the detection of the intrinsic molecular charge of target cDNA molecules after the hybridization event between cDNA and immobilized probe ssDNA. The test solutions contain synthetic cDNA oligonucleotides (with a sequence of tuberculosis mycobacteria genome) or PCR-amplified DNA (which origins from a template DNA strand that has been extracted from Mycobacterium avium paratuberculosis-spiked human sputum samples), respectively. Sensor responses up to 41 mV have been measured for the test solutions with DNA, while only small signals of ∼5 mV were detected for solutions without DNA. The lower detection limit of the EIS sensors was ∼0.3 nM, and the sensitivity was ∼7.2 mV/decade. Fluorescence experiments using SybrGreen I fluorescence dye support the electrochemical results.
Detection of triacetone triperoxide using temperature cycled metal-oxide semiconductor gas sensors
(2015)
A novel method to determine the extruded length of a metallic wire for a directed energy deposition (DED) process using a microwave (MW) plasma jet with a straight-through wire feed is presented. The method is based on the relative comparison of the measured frequency response obtained by the large-signal scattering parameter (Hot-S) technique. In the practical working range, repeatability of less than 6% for a nonactive plasma and 9% for the active plasma state is found. Measurements are conducted with a focus on a simple solution to decrease the processing time and reduce the integration time of the process into the existing hardware. It is shown that monitoring a single frequency for magnitude and phase changes is sufficient to achieve good accuracy. A combination of different measurement values to determine the length is possible. The applicability to different diameter of the same material is shown as well as a contact detection of the wire and metallic substrate.