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Limit loads of circumferentially flawed pipes and cylindrical vessels under internal pressure
(2006)
In: Technical feasibility and reliability of passive safety systems for nuclear power plants. Proceedings of an Advisory Group Meeting held in Jülich, 21-24 November 1994. - Vienna , 1996. - Seite: 43 - 55 IAEA-TECDOC-920 Abstract: It is shown that the difficulty for probabilistic fracture mechanics (PFM) is the general problem of the high reliability of a small population. There is no way around the problem as yet. Therefore what PFM can contribute to the reliability of steel pressure boundaries is demonstrated with the example of a typical reactor pressure vessel and critically discussed. Although no method is distinguishable that could give exact failure probabilities, PFM has several additional chances. Upper limits for failure probability may be obtained together with trends for design and operating conditions. Further, PFM can identify the most sensitive parameters, improved control of which would increase reliability. Thus PFM should play a vital role in the analysis of steel pressure boundaries despite all shortcomings.
A new and simple method for nanostructuring using conventional photolithography and layer expansion or pattern-size reduction technique is presented, which can further be applied for the fabrication of different nanostructures and nano-devices. The method is based on the conversion of a photolithographically patterned metal layer to a metal-oxide mask with improved pattern-size resolution using thermal oxidation. With this technique, the pattern size can be scaled down to several nanometer dimensions. The proposed method is experimentally demonstrated by preparing nanostructures with different configurations and layouts, like circles, rectangles, trapezoids, “fluidic-channel”-, “cantilever”- and meander-type structures.
Functional testing and characterisation of ISFETs on wafer level by means of a micro-droplet cell
(2006)
A wafer-level functionality testing and characterisation system for ISFETs (ionsensitive field-effect transistor) is realised by means of integration of a specifically designed capillary electrochemical micro-droplet cell into a commercial wafer prober-station. The developed system allows the identification and selection of “good” ISFETs at the earliest stage and to avoid expensive bonding, encapsulation and packaging processes for nonfunctioning ISFETs and thus, to decrease costs, which are wasted for bad dies. The developed system is also feasible for wafer-level characterisation of ISFETs in terms of sensitivity, hysteresis and response time. Additionally, the system might be also utilised for wafer-level testing of further electrochemical sensors.
Development of an optimized LSO/LuYAP phoswich detector head for the Lausanne ClearPET demonstrator
(2006)
This paper describes the LSO/LuYAP phoswich detector head developed for the ClearPET small animal PET scanner demonstrator that is under construction in Lausanne within the Crystal Clear Collaboration. The detector head consists of a dual layer of 8×8 LSO and LuYAP crystal arrays coupled to a multi-anode photomultiplier tube (Hamamatsu R7600-M64). Equalistion of the LSO/LuYAP light collection is obtained through partial attenuation of the LSO scintillation light using a thin aluminum deposit of 20-35 nm on LSO and appropriate temperature regulation of the phoswich head between 30°C to 60°C. At 511keV, typical FWHM energy resolutions of the pixels of a phoswich head amounts to (28±2)% for LSO and (25±2)% for LuYAP. The LSO versus LuYAP crystal identification efficiency is better than 98%. Six detector modules have been mounted on a rotating gantry. Axial and tangential spatial resolutions were measured up to 4 cm from the scanner axis and compared to Monte Carlo simulations using GATE. FWHM spatial resolution ranges from 1.3 mm on axis to 2.6 mm at 4 cm from the axis.