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Die Erfindung betrifft eine Vorrichtung zur Bestimmung einer Relativlage zwischen einem feststehenden Teil und einem zu demselben in eine Bewegungsrichtung bewegbaren beweglichen Teil, wobei der feststehende Teil mit einem Wiegandsensor versehen ist, wobei der Wiegandsensor zwischen zwei gegenpolig zueinander ausgebildeten Permanentmagneten angeordnet ist und dass der bewegliche Teil eine Mehrzahl von beabstandet zueinander angeordneten Magnetisierungsstegen aus einem magnetisch leitenden Material aufweist, die in der Bewegungsrichtung zumindest eine gleich große Erstreckung aufweisen wie der Permanentmagnet, dass ein Abstand zwischen benachbarten Magnetisierungsstegen derart gewählt ist, dass in einer ersten Relativlage ein erster Permanentmagnet von einem der Magnetisierungsstege überdeckt ist und ein zweiter Permanentmagnet nicht von einem der Magnetisierungsstege überdeckt ist.
Der Internally Commutated Thyristor (ICT) : ein neuartiger GCT mit integrierter Ausschalteinheit
(2007)
The continuously growing amount of renewable sources starts compromising the stability of electrical grids. Contradictory to fossil fuel power plants, energy production of wind and photovoltaic (PV) energy is fluctuating. Although predictions have significantly improved, an outage of multi-MW offshore wind farms poses a challenging problem. One solution could be the integration of storage systems in the grid. After a short overview, this paper focuses on two exemplary battery storage systems, including the required power electronics. The grid integration, as well as the optimal usage of volatile energy reserves, is presented for a 5- kW PV system for home application, as well as for a 100- MW medium-voltage system, intended for wind farm usage. The efficiency and cost of topologies are investigated as a key parameter for large-scale integration of renewable power at medium- and low-voltage.
This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.
Physical layer specification of the L-band Digital Aeronautical Communications System (L-DACS1)
(2009)
3D-Imaging
(2009)