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Photoabsorption of alloys of Al with transition metals V, Fe, Ni and Cu and Pr near the Al L₂,₃-edge
(1974)
The onset of Al 2p transitions of VAl₃, FeAl, NiAl, NiAl₃, CuAl₂, PrAl₂ and the disordered alloys V-Al (16 at % Al, 28%, 41%), Fe-Al (11%) is shifted up to 1.1 eV. New pronounced structure develops close to the onset which for NiAl agrees with a density of states calculation by Connolly and Johnson.
Optical constants from the far infrared to the X-ray region: Mg, Al, Cu, Ag, Au, Bi, C, and Al₂O₃
(1975)
The absorption coefficient of VAI3, FeAI, NiAI, NiAl2, CuAI2, PrAl2, and of disordered V–AI (16 at% AI, 28%, 41%) and Fe–AI (11%) alloys has been measured in the region of the M₂,₃ absorption of the transition metals and the Labsorption of AI. The strong changes of the AI spectrum in the region of the 100 eV maximum upon alloying are explained as another evidence of the EXAFS (extended X-ray absorption fine structure) nature of these structures. The broad, prominent absorption peaks from the 3p excitations in V and Fe and from the 4d excitations in Pr are influenced only little on allyoing and thus appear to be of atomic origin. The fine structure at the onset of the Pr 4d transitions is identical in the metal and the alloy but differs from that of Pr oxide. The only M₂,₃ edge which is detectably shifted is that of Ni (up to 2.1 eV), whereas the onset of the AI L₂,₃ edge is shifted in all the alloys (up to 1.1 eV). The shifts are interpreted in accordance with X-ray fluorescence and nuclear resonance measurements as changes of the density of states in the valence band of the alloys.
Light-addressable potentiometric sensors (LAPS) are field-effect-based sensors. A modulated light source is used to define the particular measurement spot to perform spatially resolved measurements of chemical species and to generate chemical images. In this work, an organic-LED (OLED) display has been chosen as a light source. This allows high measurement resolution and miniaturisation of the system. A new developed driving method for the OLED display optimised for LAPS-based measurements is demonstrated. The new method enables to define modulation frequencies between 1 kHz and 16 kHz and hence, reduces the measurement time of a chemical image by a factor of 40 compared to the traditional addressing of an OLED display.
Side bands in ¹⁷² Hf
(1977)
Side bands in ¹⁷² Hf
(1978)
In-beam study of ¹⁴⁴ Gd
(1978)
High-spin states in ¹³³ La
(1982)
In-beam study of ¹⁴⁴ Gd
(1978)