Refine
Year of publication
Institute
- Fachbereich Elektrotechnik und Informationstechnik (1182) (remove)
Language
- English (717)
- German (464)
- Multiple languages (1)
Document Type
- Article (637)
- Conference Proceeding (302)
- Book (114)
- Part of a Book (64)
- Patent (16)
- Report (9)
- Other (8)
- Contribution to a Periodical (6)
- Course Material (6)
- Doctoral Thesis (6)
Keywords
- Multimediamarkt (7)
- Enterprise Architecture (5)
- MINLP (5)
- Engineering optimization (4)
- Gamification (4)
- Serious Game (4)
- Auslenkung (3)
- Digitale Transformation (3)
- Digitalisierung (3)
- Education (3)
If we think about applications for modern Power MOSFETs using trench technology, running them in linear mode may not be top of the priority list. Yet there are multiple uses for Trench Power MOSFETs in linear mode. In fact, even turning the device on and off in switching applications is a form of linear operation. Also, these components can be run in linear mode to protect the device against voltage surges. This article will illustrate the factors that need to be considered for linear operation and show how Trench Power MOSFETs are suited to it.
This article describes the functionality of a MATLAB® library that can be used to develop motion-logic applications in MATLAB programming language for industrial drive and control systems using the well known sercos automation bus. Therewith MATLAB's functionality is extended to designing automation applications from single axis machines up to multi-kinematic robots.
Security Awareness ist derzeit ein viel diskutiertes Thema. Es reicht nicht, einfach nur ein paar technische Systeme (z.B. Firewalls) zu installieren, um ein angemessenes Schutzniveau zu erzielen. Neben einer guten Organisation von IT Security ist es auch notwendig, den Mitarbeiter einzubinden. Der vielzitierte "Faktor Mensch" ist derjenige, der die Technik korrekt anwenden muss und der durch falsches Verhalten technische und organisatorische Schutzmaßnahmen aushebeln kann. Deshalb reicht es nicht aus, wenn sich der Mitarbeiter der Gefahren bewusst ("aware") ist, er muss auch dementsprechend "sicher" handeln.
This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.
Wir stellen einen USB-Baustein vor, der eine kostengünstige und universelle Möglichkeit schafft , im Unterricht den Themenkreis Messen-Steuern-Regeln zu behandeln. Die Funktionalität orientiert sich am CVK-Interface der Firma Fischertechnik. Im Gegensatz zu kommerziellen Lösungen erlaubt unser Aufbau auch den preiswerten Einsatz in Gruppen- oder Einzelarbeit. Abschließend berichten wir über ein Beispiel aus dem Unterrichtseinsatz.
This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.