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Arnold Förster (143)
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Article (143)
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English
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Fachbereich Energietechnik (143)
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143
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Title
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Author
Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. Förster ; B. A. Belyaev ...
(1999)
Arnold Förster
;
S. A. Vitusevich
;
B. A. Belyaev
An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-μm wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P.
(1999)
Arnold Förster
;
M. Marso
;
P. Gersdorf
;
A. Fox
Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
(2000)
A. Rosenauer
;
W. Oberst
;
D. Litvinov
;
D. Gerthsen
;
Arnold Förster
;
R. Schmidt
Die neue Welt
(1999)
Arnold Förster
;
Hans Lüth
;
Thomas Schäpers
Vertically integrated transistor-laser structure, take 2
(2000)
R. C. P. Hoskens
;
V.I. Tolstikhin
;
Arnold Förster
;
T.G. van de Roer
Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
J. Darmo
;
F. Schäffer
;
Arnold Förster
;
P. Kordos
Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
(1999)
Arnold Förster
;
M. Griebel
;
K.M. Indlekofer
;
H. Lüth
A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
(2000)
U. Hodel
;
A. Orzati
;
M. Marso
;
O. Homann
;
A. Fox
;
A. v. d. Hart
;
Arnold Förster
;
P. Kordos
;
H. Lüth
Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
(2000)
R.C.P. Hoskens
;
T.G. van de Roer
;
V.I. Tolstikhin
;
Arnold Förster
A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
(2001)
J. Stock
;
J. Malindretos
;
K.M. Indlekofer
;
Michael Pöttgens
;
Arnold Förster
;
Hans Lüth
101
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110