Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ...
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Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
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Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing
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Die neue Welt
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Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
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Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
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Layer Deposition I
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