In-beam study of ¹⁴⁵ Gd
(1979)
Side bands in ¹⁷² Hf
(1978)
High spin states in ¹³⁶ Ce
(1975)
High spin states in ¹³⁶ Ce
(1975)
In-beam study of ¹⁴⁴ Gd
(1978)
In-beam study of ¹⁴⁴ Gd
(1977)
In-beam study of ¹⁴⁴ Gd
(1978)
High-spin states in ¹³³ La
(1982)
Isomeric states in ¹³⁴ Ba
(1980)
Isomeric states in ¹³⁴ Ba
(1980)
High-spin states in ¹³³ La
(1980)
Isomeric state in ¹³⁴ La
(1981)
Isomeric state in ¹³⁶ La
(1981)
High-spin states in ¹⁸⁰ Os
(1979)
Band structure in ¹⁹⁴ Au
(1979)
Side-bands in ¹⁸⁰ Os
(1981)
High spin states in ¹⁸⁸ Au
(1982)
Yrast states up to spin 18 have been identified in ¹³²Ce. The energies and spins of the levels suggest the existence of two fairly well-behaved collective bands. The results are compared with those obtained in the rare-earth deformed region.
In-beam study of ¹⁴³ Eu
(1988)
Macroporous silicon has been etched from n-type Si, using a vertical etching cell where no rear side contact on the silicon wafer is necessary. The resulting macropores have been characterised by means of Scanning Electron Microscopy (SEM). After etching, SiO₂ was thermally grown on the top of the porous silicon as an insulating layer and Si₃N₄ was deposited by means of Low Pressure Chemical Vapour Deposition (LPCVD) as transducer material to fabricate a capacitive pH sensor. In order to prepare porous biosensors, the enzyme penicillinase has been additionally immobilised inside the porous structure. Electrochemical measurements of the pH sensor and the biosensor with an Electrolyte/Insulator/Semiconductor (EIS) structure have been performed in the Capacitance/Voltage (C/V) and Constant capacitance (ConCap) mode.