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Förster, Arnold
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Gerthsen, D.
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Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
(2000)
Rosenauer, A.
;
Oberst, W.
;
Litvinov, D.
;
Gerthsen, D.
;
Förster, Arnold
;
Schmidt, R.
Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A.
(1999)
Förster, Arnold
;
Rosenauer, A.
;
Oberst, W.
;
Gerthsen, D.
Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.; Gerthsen D.; Förster A.
(1998)
Förster, Arnold
;
Rosenauer, A.
;
Fischer, U.
;
Gerthsen, D.
Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. Förster ...
(1993)
Förster, Arnold
;
Dieker, C.
;
Gerthsen, D.
AlAs/GaAs Quantum well structures: Interface properties investigated by high-resolution transmission electron microscopy and photoluminescence spectroscopy / T. Walther ; D. Gerthsen ; R. Carius ; A. Förster ...
(1993)
Walther, T.
;
Gerthsen, D.
;
Carius, Reinhard
;
Förster, Arnold
Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ...
(1995)
Förster, Arnold
;
Tillmann, K.
;
Gerthsen, D.
Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates / M. Lentzen ; D. Gerthsen ; A. Förster ...
(1995)
Förster, Arnold
;
Lentzen, M.
;
Gerthsen, D.
Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ...
(1995)
Förster, Arnold
;
Tillmann, K.
;
Gerthsen, D.
Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K.
(1995)
Förster, Arnold
;
Tillmann, K.
;
Gerthsen, D.
;
Pfundstein, P.
Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
(1992)
Förster, Arnold
;
Lentzen, M.
;
Gerthsen, D.
Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster
(1997)
Förster, Arnold
;
Rosenauer, A.
;
Fischer, U.
;
Gerthsen, D.
The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
(1994)
Förster, Arnold
;
Lange, J.
;
Gerthsen, D.
Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
(1993)
Förster, Arnold
;
Lange, J.
;
Gerthsen, D.
1
to
13