Deutsch
Login
Open Access
Home
Search
Browse
Publish
FAQ
Article
Refine
Author
Förster, Arnold
(11)
Lüth, H.
(5)
Thielemann, Frank
(4)
Belyaev, A. E.
(3)
Dielmann, Klaus-Peter
(3)
Kordos, P.
(3)
Schwarzer, Klemens
(3)
Vitusevich, S. A.
(3)
Danylyuk, S. V.
(2)
Donner, O.
(2)
+ more
Year of publication
2000 (26)
(remove)
Institute
Fachbereich Energietechnik (26)
(remove)
Has Fulltext
no
(26)
Language
German
(13)
English
(13)
Document Type
Article (26)
(remove)
Zugriffsart
campus
(7)
bezahl
(2)
weltweit
(1)
Is part of the Bibliography
yes
(24)
no
(2)
26
search hits
13
to
22
Export
BibTeX
CSV
RIS
10
10
20
50
100
Sort by
Year
Year
Title
Title
Author
Author
Wissensmanagement und neue Informationstechnologie . Lang, Franz Peter; Thielemann, Frank
(2000)
Thielemann, Frank
;
Lang, Franz Peter
Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Reetz, W.
;
Lüth, H.
;
Belyaev, A. E.
;
Danylyuk, S. V.
Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
(2000)
Schmidt, R.
;
Tonnesmann, A.
;
Förster, Arnold
;
Grimm, M.
;
Kordos, P.
;
Lüth, H.
Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
(2000)
Rosenauer, A.
;
Oberst, W.
;
Litvinov, D.
;
Gerthsen, D.
;
Förster, Arnold
;
Schmidt, R.
Vertically integrated transistor-laser structure, take 2
(2000)
Hoskens, R. C. P.
;
Tolstikhin, V.I.
;
Förster, Arnold
;
Roer, T.G. van de
Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
Darmo, J.
;
Schäffer, F.
;
Förster, Arnold
;
Kordos, P.
A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
(2000)
Hodel, U.
;
Orzati, A.
;
Marso, M.
;
Homann, O.
;
Fox, A.
;
Hart, A. v. d.
;
Förster, Arnold
;
Kordos, P.
;
Lüth, H.
Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
(2000)
Hoskens, R.C.P.
;
Roer, T.G. van de
;
Tolstikhin, V.I.
;
Förster, Arnold
Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Indlekofer, K.-M.
;
Lüth, H.
;
Belyaev, A. E.
;
Glavin, B. A.
;
Konakova, R. V.
Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
(2000)
Tillmann, K.
;
Förster, Arnold
13
to
22