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D. Gerthsen (13)
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The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
(1994)
Arnold Förster
;
J. Lange
;
D. Gerthsen
Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
(1992)
Arnold Förster
;
M. Lentzen
;
D. Gerthsen
Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
(1993)
Arnold Förster
;
J. Lange
;
D. Gerthsen
Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.; Gerthsen D.; Förster A.
(1998)
Arnold Förster
;
A. Rosenauer
;
U. Fischer
;
D. Gerthsen
Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
(2000)
A. Rosenauer
;
W. Oberst
;
D. Litvinov
;
D. Gerthsen
;
Arnold Förster
;
R. Schmidt
Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A.
(1999)
Arnold Förster
;
A. Rosenauer
;
W. Oberst
;
D. Gerthsen
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