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Arnold Förster (146)
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Fachbereich Energietechnik
(144)
INB - Institut für Nano- und Biotechnologien
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146
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Title
Title
Author
Author
Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
(1993)
Arnold Förster
;
J. Lange
;
D. Gerthsen
Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
(1993)
Arnold Förster
;
C. Ohler
;
J. Moers
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Arnold Förster
;
J. M. Layet
;
H. Lüth
Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ; U. Rossow ... A. Förter ...
(1993)
Arnold Förster
;
U. Resch
;
S. M. Scholz
The Schottky barrier at the InSb(110)–Sn interface
(1987)
Arnold Förster
;
A. Tulke
;
H. Lüth
Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
(1989)
Arnold Förster
;
Angela Rizzi
;
H. Lüth
Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ; N. Essera ; Y. S. Raptis ... A. Förster ...
(1992)
Arnold Förster
;
U. Resch
;
N. Essera
;
Y. S. Raptis
Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ...
(1994)
Arnold Förster
;
T. Schäpers
;
F. Müller
Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ...
(1988)
Arnold Förster
;
B.-J. Schäfer
;
M. Londschien
Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
(1987)
Arnold Förster
;
H. Lüth
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