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Arnold Förster (146)
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Fachbereich Energietechnik
(144)
INB - Institut für Nano- und Biotechnologien
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146
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Title
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Author
The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy
(1986)
Arnold Förster
;
A. Spitzer
;
H. Lüth
Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.; Gerthsen D.; Förster A.
(1998)
Arnold Förster
;
A. Rosenauer
;
U. Fischer
;
D. Gerthsen
Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H.
(1998)
Arnold Förster
;
A. Hartmann
;
Ch. Dieker
;
M. Hollfelder
Transport through a buried double barrier single electron transistor at low temperatures
(1998)
Arnold Förster
;
M. Griebel
;
M. Indlekofer
;
H. Lüth
Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H.
(1998)
Arnold Förster
;
S. Malzer
;
J. Heber
;
M. Peter
550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., Förster, A.; Marso, M.; Rüders, F.
(1998)
Arnold Förster
;
P. Kordos
;
M. Marso
;
F. Rüders
Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
(2000)
S. A. Vitusevich
;
Arnold Förster
;
W. Reetz
;
H. Lüth
;
A. E. Belyaev
;
S. V. Danylyuk
Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
(2000)
R. Schmidt
;
A. Tonnesmann
;
Arnold Förster
;
M. Grimm
;
P. Kordos
;
H. Lüth
Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P.
(1999)
Arnold Förster
;
J. Betko
;
M. Morvic
;
J. Novak
Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements. Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P.
(1999)
Arnold Förster
;
M. Morvic
;
J. Betko
;
J. Novak
91
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100