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Förster, Arnold
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Lüth, H.
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Belyaev, A. E.
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Kordos, P.
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Vitusevich, S. A.
(3)
Danylyuk, S. V.
(2)
Reetz, W.
(2)
Roer, T.G. van de
(2)
Schmidt, R.
(2)
Tolstikhin, V.I.
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2000 (13)
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Vertically integrated transistor-laser structure, take 2
(2000)
Hoskens, R. C. P.
;
Tolstikhin, V.I.
;
Förster, Arnold
;
Roer, T.G. van de
Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Indlekofer, K.-M.
;
Lüth, H.
;
Belyaev, A. E.
;
Glavin, B. A.
;
Konakova, R. V.
Thermal performance of a rock bed storage system
(2000)
Bansal, N. K.
;
Müller, C.
;
Vieira, M. E.
;
Faber, Christian
;
Schwarzer, Klemens
Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
(2000)
Rosenauer, A.
;
Oberst, W.
;
Litvinov, D.
;
Gerthsen, D.
;
Förster, Arnold
;
Schmidt, R.
Spectral Responsivity of single-quantum-well photodetectors
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Reetz, W.
;
Lüth, H.
;
Belyaev, A. E.
;
Danylyuk, S. V.
Results from parabolic trough systems for process heat at the DLR Cologne / D. Krüger ; B. Hoffschmidt ; K. Hennecke ...
(2000)
Hoffschmidt, Bernhard
;
Krüger, D.
;
Hennecke, K.
Resonant tunneling diodes operating as modern quantum transport devices
(2000)
Förster, Arnold
Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
(2000)
Schmidt, R.
;
Tonnesmann, A.
;
Förster, Arnold
;
Grimm, M.
;
Kordos, P.
;
Lüth, H.
Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
(2000)
Hoskens, R.C.P.
;
Roer, T.G. van de
;
Tolstikhin, V.I.
;
Förster, Arnold
Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Reetz, W.
;
Lüth, H.
;
Belyaev, A. E.
;
Danylyuk, S. V.
Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
(2000)
Tillmann, K.
;
Förster, Arnold
Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
Darmo, J.
;
Schäffer, F.
;
Förster, Arnold
;
Kordos, P.
A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
(2000)
Hodel, U.
;
Orzati, A.
;
Marso, M.
;
Homann, O.
;
Fox, A.
;
Hart, A. v. d.
;
Förster, Arnold
;
Kordos, P.
;
Lüth, H.
1
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