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Institute
- Fachbereich Elektrotechnik und Informationstechnik (1150) (remove)
Robuster Algorithmus zur Streuparameterbestimmung für systemfehlerkorrigierte Netzwerkanalysatoren
(1991)
Scattering Parameter Measurements of Microstrip Devices using the Double-LNN Calibration Technique
(1994)
The double-LNN Calibration technique for scattering parameter measurements of microstrip devices
(1995)
Novel Algorithms for FMCW Range Finding with Microwaves. Stolle, R.; Heuermann, H.; Schiek, B.
(1995)
Normative Regulations
(2010)
Effiziente Bestimmung der Kabelschirmdämpfung bei hohen Frequenzen in Modenverwirbelungskammern
(2006)
Design of a Measurement Setup for the Impedance of Low-Resistance Plate-Conductors in the RF-Range
(2006)
Untersuchung eines hybriden EMV-Simulationsverfahrens anhand eines virtuellen Komponententests
(2003)
Höhere Mathematik kompakt
(2013)
Carbon nanofiber nonwovens represent a powerful class of materials with prospective application in filtration technology or as electrodes with high surface area in batteries, fuel cells, and supercapacitors. While new precursor-to-carbon conversion processes have been explored to overcome productivity restrictions for carbon fiber tows, alternatives for the two-step thermal conversion of polyacrylonitrile precursors into carbon fiber nonwovens are absent. In this work, we develop a continuous roll-to-roll stabilization process using an atmospheric pressure microwave plasma jet. We explore the influence of various plasma-jet parameters on the morphology of the nonwoven and compare the stabilized nonwoven to thermally stabilized samples using scanning electron microscopy, differential scanning calorimetry, and infrared spectroscopy. We show that stabilization with a non-equilibrium plasma-jet can be twice as productive as the conventional thermal stabilization in a convection furnace, while producing electrodes of comparable electrochemical performance.
The Carologistics team participates in the RoboCup Logistics League for the seventh year. The RCLL requires precise vision,
manipulation and path planning, as well as complex high-level decision
making and multi-robot coordination. We outline our approach with an
emphasis on recent modifications to those components.
The team members in 2018 are David Bosen, Christoph Gollok, Mostafa
Gomaa, Daniel Habering, Till Hofmann, Nicolas Limpert, Sebastian Schönitz,
Morian Sonnet, Carsten Stoffels, and Tarik Viehmann.
This paper is based on the last year’s team description.
High-intensity discharge lamps can be driven by radio-frequency signals in the ISM frequency band at 2.45 GHz, using a matching network to transform the impedance of the plasma to the source impedance. To achieve an optimal operating condition, a good characterization of the lamp in terms of radio frequency equivalent circuits under operating conditions is necessary, enabling the design of an efficient matching network. This paper presents the characterization technique for such lamps and presents the design of the required matching network. For the characterization, a high-intensity discharge lamp was driven by a monofrequent large signal at 2.45 GHz, whereas a frequency sweep over 300 MHz was performed across this signal to measure so-called small-signal hot S-parameters using a vector network analyzer. These parameters are then used as an equivalent load in a circuit simulator to design an appropriate matching network. Using the measured data as a black-box model in the simulation results in a quick and efficient method to simulate and design efficient matching networks in spite of the complex plasma behavior. Furthermore, photometric analysis of high-intensity discharge lamps are carried out, comparing microwave operation to conventional operation.
If we think about applications for modern Power MOSFETs using trench technology, running them in linear mode may not be top of the priority list. Yet there are multiple uses for Trench Power MOSFETs in linear mode. In fact, even turning the device on and off in switching applications is a form of linear operation. Also, these components can be run in linear mode to protect the device against voltage surges. This article will illustrate the factors that need to be considered for linear operation and show how Trench Power MOSFETs are suited to it.