Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K.
Author: | Arnold Förster, K. Tillmann, D. Gerthsen, P. Pfundstein |
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ISBN: | 0021-8979 |
Parent Title (English): | Journal of applied physics. 78 (1995), H. 6 |
Document Type: | Article |
Language: | English |
Year of Completion: | 1995 |
First Page: | 3824 |
Last Page: | 3832 |
Link: | http://dx.doi.org/10.1063/1.359897 |
Zugriffsart: | campus |
Institutes: | FH Aachen / Fachbereich Energietechnik |