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Table of Contents Introduction 1. Generative Manufacturing Processes 2. Classification of Generative Manufacturing Processes 3. Application of Generative Processes on the Fabrication of Ceramic Parts 3.1 Extrusion 3.2 3D-Printing 3.3 Sintering – Laser Sintering 3.4 Layer-Laminate Processes 3.5 Stereolithography (sometimes written: Stereo Lithography) 4. Layer Milling 5. Conclusion - Vision
We report on the synthesis and CO gas-sensing properties of mesoporous tin(IV) oxides (SnO2). For the synthesis cetyltrimethylammonium bromide (CTABr) was used as a structure-directing agent; the resulting SnO2 powders were applied as films to commercially available sensor substrates by drop coating. Nitrogen physisorption shows specific surface areas up to 160 m2·g-1 and mean pore diameters of about 4 nm, as verified by TEM. The film conductance was measured in dependence on the CO concentration in humid synthetic air at a constant temperature of 300 °C. The sensors show a high sensitivity at low CO concentrations and turn out to be largely insensitive towards changes in the relative humidity. We compare the materials with commercially available SnO2-based sensors.
Functional testing and characterisation of ISFETs on wafer level by means of a micro-droplet cell
(2006)
A wafer-level functionality testing and characterisation system for ISFETs (ionsensitive field-effect transistor) is realised by means of integration of a specifically designed capillary electrochemical micro-droplet cell into a commercial wafer prober-station. The developed system allows the identification and selection of “good” ISFETs at the earliest stage and to avoid expensive bonding, encapsulation and packaging processes for nonfunctioning ISFETs and thus, to decrease costs, which are wasted for bad dies. The developed system is also feasible for wafer-level characterisation of ISFETs in terms of sensitivity, hysteresis and response time. Additionally, the system might be also utilised for wafer-level testing of further electrochemical sensors.
GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.
Development of an optimized LSO/LuYAP phoswich detector head for the Lausanne ClearPET demonstrator
(2006)
This paper describes the LSO/LuYAP phoswich detector head developed for the ClearPET small animal PET scanner demonstrator that is under construction in Lausanne within the Crystal Clear Collaboration. The detector head consists of a dual layer of 8×8 LSO and LuYAP crystal arrays coupled to a multi-anode photomultiplier tube (Hamamatsu R7600-M64). Equalistion of the LSO/LuYAP light collection is obtained through partial attenuation of the LSO scintillation light using a thin aluminum deposit of 20-35 nm on LSO and appropriate temperature regulation of the phoswich head between 30°C to 60°C. At 511keV, typical FWHM energy resolutions of the pixels of a phoswich head amounts to (28±2)% for LSO and (25±2)% for LuYAP. The LSO versus LuYAP crystal identification efficiency is better than 98%. Six detector modules have been mounted on a rotating gantry. Axial and tangential spatial resolutions were measured up to 4 cm from the scanner axis and compared to Monte Carlo simulations using GATE. FWHM spatial resolution ranges from 1.3 mm on axis to 2.6 mm at 4 cm from the axis.