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Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ...
(1995)
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy
(1986)
Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
(1987)